STW47NM60ND Datasheet (STMicroelectronics)

STW47NM60ND, N-CHANNEL MOSFET

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

It is therefore suitable for the most

STW47NM60ND Features

* 3 2 1 TO-247 Figure 1. Internal schematic diagram Order code VDS @ TJMAX RDS(on) max ID STW47NM60ND 650 V 0.088 Ω 35 A

* Designed for automotive applications and AEC-Q101 qualified

* The worldwide best RDS(on)

* area amongst the fast recovery diode devices

* 100% avala