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STW47NM60ND N-CHANNEL MOSFET

STW47NM60ND Description

STW47NM60ND Automotive-grade N-channel 600 V, 0.075 Ω typ., 35 A FDmesh™ II Power MOSFET (with fast diode) in a TO-247 package Datasheet - production.
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology.

STW47NM60ND Features

* 3 2 1 TO-247 Figure 1. Internal schematic diagram Order code VDS @ TJMAX RDS(on) max ID STW47NM60ND 650 V 0.088 Ω 35 A

STW47NM60ND Applications

* and AEC-Q101 qualified
* The worldwide best RDS(on)
* area amongst the fast recovery diode devices
* 100% avalanche tested
* Low input capacitance and gate charge
* Low gate input resistance
* Extremely high dv/dt and avalanche capabilities. $ Applicatio

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