STW80N06-10 Datasheet (STMicroelectronics)

STW80N06-10, N-Channel Power MOSFET

® STW80N06-10 N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STW80N06-10 www.DataSheet4U.com s s s s s s s s V DSS 60 V R DS(on) < 0.010 Ω ID 80 A TYPICAL RDS(on) = 0.0085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE HIGH dV/dt RUGGEDNESS APPLICATION ORIENTED CHARACTERIZATION 1 2 3 TO-247 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s POWER MOT