STW8NB100

N - CHANNEL 1000V - 1.2ohm- 8A - TO-247 PowerMESH MOSFET

ST Microelectronics

STW8NB100 General Description

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptiona.

STW8NB100 Datasheet (50.76 KB)

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STW8NB100

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STMicroelectronics ↗

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N - channel 1000v - 1.2ohm- 8a - to-247 powermesh mosfet.
® STW8NB100 N - CHANNEL 1000V - 1.2Ω - 8A - TO-247 PowerMESH™ MOSFET PRELIMINARY DATA TYPE STW8NB100 s s s s s s s V DSS 1000 V R DS(on) < 1.5 Ω .

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STW8NB100 CHANNEL 1000V 1.2ohm- TO-247 PowerMESH MOSFET ST Microelectronics

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STW8NB100 General Description

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