* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener vo
STW8NC70Z Datasheet (199.85 KB)
STW8NC70Z
199.85 KB
N-channel enhancement mode power mos transistors.
N-CHANNEL 700V - 1.1 Ω - 7A TO-247 Zener-Protected PowerMESH™III MOSFET
TYPE STW8NC70Z
www.DataSheet4U.com s TYPICAL
s
STW8NC70Z
VDSS 700 V
RDS(on).
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