STW8NC80Z N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

STMicroelectronics

Description

N-CHANNEL 800V - 1.3 Ω - 6.7A TO-247 Zener-Protected PowerMESH™III MOSFET TYPE STW8NC80Z www.DataSheet4U.com n TYPICAL n n n n STW8NC80Z VDSS 800 V .
The third generation of MESH OVERLAY ™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-.

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Datasheet Specifications

Part number: STW8NC80Z
Manufacturer: STMicroelectronics ↗
File Size: 215.06 KB
Datasheet: STW8NC80Z_STMicroelectronics.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener vo

Applications

* APPLICATIONS n SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION n WELDING EQUIPMENT INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q ) PTOT IGS VESD(G-S) dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k

STW8NC80Z Distributors

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STW8NC80Z N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS STMicroelectronics

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