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STW8NC80Z Datasheet - STMicroelectronics

STW8NC80Z N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

The third generation of MESH OVERLAY ™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large vari.

STW8NC80Z Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener vo

STW8NC80Z Datasheet (215.06 KB)

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Datasheet Details

Part number:

STW8NC80Z

Manufacturer:

STMicroelectronics ↗

File Size:

215.06 KB

Description:

N-channel enhancement mode power mos transistors.

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STW8NC80Z N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS STMicroelectronics

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