* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener vo
STW8NC80Z Datasheet (215.06 KB)
STW8NC80Z
215.06 KB
N-channel enhancement mode power mos transistors.
N-CHANNEL 800V - 1.3 Ω - 6.7A TO-247 Zener-Protected PowerMESH™III MOSFET
TYPE STW8NC80Z
www.DataSheet4U.com n TYPICAL
n n n n
STW8NC80Z
VDSS 800 V
.
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