STW8N120K5 Datasheet (STMicroelectronics)

STW8N120K5, N-channel Power MOSFET

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications S(3) AM01476v1_No_tab requiring superior power density and high

STW8N120K5 Features

* Order code VDS RDS(on) max. STW8N120K5 1200 V 2.00 Ω

* Industry’s lowest RDS(on) x area

* Industry’s best FoM (figure of merit)

* Ultra-low gate charge

* 100% avalanche tested

* Zener-protected ID 6A PTOT 130 W D(2) Applications

* Switching a