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SPC5604 Datasheet - SYNC POWER

SPC5604 N & P Pair Enhancement Mode MOSFET

The SPC5604 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularl.

SPC5604 Features

* N-Channel 40V/10A,RDS(ON)= 24mΩ@VGS= 10V 40V/ 8A,RDS(ON)= 28mΩ@VGS= 4.5V 40V/ 6A,RDS(ON)= 32mΩ@VGS= 2.5V P-Channel -40V/-10A,RDS(ON)= 32mΩ@VGS=- 10V -40V/- 8A,RDS(ON)= 42mΩ@VGS=- 4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capabilit

SPC5604-SYNCPOWER.pdf

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Datasheet Details

Part number:

SPC5604

Manufacturer:

SYNC POWER

File Size:

513.11 KB

Description:

N & p pair enhancement mode mosfet.

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SPC5604 SPC5604 Pair Enhancement Mode MOSFET SYNC POWER

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