SPN1306

N-Channel MOSFET

SYNC POWER

SPN1306 Features

* N-Channel 30V/0.95A,RDS(ON)=550mΩ@VGS=4.5V 30V/0.75A,RDS(ON)=650mΩ@VGS=2.5V 30V/0.65A,RDS(ON)=850mΩ@VGS=1.8V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* ESD protected

* SOT-323 package design PIN C

SPN1306 General Description

The SPN1306 is the N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suit.

SPN1306 Datasheet (605.22 KB)

SPN1306 Datasheet Preview — Preview of SPN1306 PDF

Datasheet Details

Part number:

SPN1306

Manufacturer:

SYNC POWER

File Size:

605.22 KB

Description:

N-channel mosfet.

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SPN1306 N-Channel MOSFET SYNC POWER

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SPN1306 Features

SPN1306 General Description

Datasheet Details

File Size:

Description:

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