SPN1306 Datasheet (SYNC POWER)

SPN1306, N-Channel MOSFET

The SPN1306 is the N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

These devices are particularly suit

SPN1306 Features

* N-Channel 30V/0.95A,RDS(ON)=550mΩ@VGS=4.5V 30V/0.75A,RDS(ON)=650mΩ@VGS=2.5V 30V/0.65A,RDS(ON)=850mΩ@VGS=1.8V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* ESD protected

* SOT-323 package design PIN C