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SPN1306 N-Channel MOSFET

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Description

SPN1306 N-Channel Enhancement Mode MOSFET .
The SPN1306 is the N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

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Datasheet Specifications

Part number
SPN1306
Manufacturer
SYNC POWER
File Size
605.22 KB
Datasheet
SPN1306-SYNCPOWER.pdf
Description
N-Channel MOSFET

Features

* N-Channel 30V/0.95A,RDS(ON)=550mΩ@VGS=4.5V 30V/0.75A,RDS(ON)=650mΩ@VGS=2.5V 30V/0.65A,RDS(ON)=850mΩ@VGS=1.8V
* Super high density cell design for extremely low RDS (ON)
* Exceptional on-resistance and maximum DC current capability
* ESD protected
* SOT-323 package design PIN C

Applications

* such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter

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