SPN1308W Datasheet (SYNC POWER)

SPN1308W, N-Channel MOSFET

The SPN1308W is the N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

These devices are particularly suit

SPN1308W Features

* N-Channel 30V/1.4A,RDS(ON)=190mΩ@VGS=10V 30V/1.0A,RDS(ON)=200mΩ@VGS=4.5V 30V/0.5A,RDS(ON)=250mΩ@VGS=2.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability

* ESD protected

* SOT-323 package design PIN CONFIG