SPN138N08 Datasheet (SYNC POWER)

SPN138N08, N-Channel MOSFET

The SPN138N08 is the N-Channel enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suitable for synchronous rectifier applicat

SPN138N08 Features

* 80V/138A,RDS(ON)=3.6mΩ@VGS=10V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* PPAK5x6-8L package design PIN CONFIGURATION (PPAK5x6-8L) PART MARKING 2023/09/28 Ver 1 Page 1 SPN138N08 N-Channel Enhancem