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SPN180T10

N-Channel MOSFET

SPN180T10 Features

* 100V/180A, RDS(ON)=3.7mΩ@VGS=10V

* High density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability

* TO-220-3L and TO-263-2L package design PIN CONFIGURATION TO-220-3L TO-263-2L PART MARKING 2020/05/13 Ver 4 Page 1 SPN180T10 N-

SPN180T10 General Description

The SPN180T10 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier ap.

SPN180T10 Datasheet (402.51 KB)

Preview of SPN180T10 PDF

Datasheet Details

Part number:

SPN180T10

Manufacturer:

SYNC POWER

File Size:

402.51 KB

Description:

N-channel mosfet.

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TAGS

SPN180T10 N-Channel MOSFET SYNC POWER

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