SPN180T10 Datasheet (SYNC POWER)

SPN180T10, N-Channel MOSFET

The SPN180T10 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suitable for synchronous rectifier ap

SPN180T10 Features

* 100V/180A, RDS(ON)=3.7mΩ@VGS=10V

* High density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability

* TO-220-3L and TO-263-2L package design PIN CONFIGURATION TO-220-3L TO-263-2L PART MARKING 2020/05/13 Ver 4 Page 1 SPN180T10 N-