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SPN180N10

N-Channel Enhancement Mode MOSFET

SPN180N10 Features

* 100V/184A, RDS(ON)=3.7mΩ@VGS=10V

* High density cell design or extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability

* TO-220-3L/TO-220F-3L/TO-263-2L/PPAK5x6 package design PIN CONFIGURATION TO-220-3L TO-220F-3L TO-263-2L PPAK5x6 PART MARKING 2024/1

SPN180N10 General Description

The SPN180N10 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier ap.

SPN180N10 Datasheet (333.02 KB)

Preview of SPN180N10 PDF

Datasheet Details

Part number:

SPN180N10

Manufacturer:

SYNC POWER

File Size:

333.02 KB

Description:

N-channel enhancement mode mosfet.

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SPN180N10 N-Channel Enhancement Mode MOSFET SYNC POWER

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