SPN180N10 Datasheet (SYNC POWER) - N-Channel Enhancement Mode MOSFET

SPN180N10, N-Channel Enhancement Mode MOSFET

The SPN180N10 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suitable for synchronous rectifier ap

SPN180N10 Features

* 100V/184A, RDS(ON)=3.7mΩ@VGS=10V

* High density cell design or extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability

* TO-220-3L/TO-220F-3L/TO-263-2L/PPAK5x6 package design PIN CONFIGURATION TO-220-3L TO-220F-3L TO-263-2L PPAK5x6 PART MARKING 2024/1