SPN2012 Datasheet - SYNC POWER

SPN2012 N-Channel MOSFET

The SPN2012 is the N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suit.

SPN2012 Features

* N-Channel 20V/0.95A,RDS(ON)=310mΩ@VGS=4.5V 20V/0.75A,RDS(ON)=360mΩ@VGS=2.5V 20V/0.65A,RDS(ON)=460mΩ@VGS=1.8V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability

* ESD protected

* SOT-23 package design PIN CON

SPN2012 Datasheet (336.50 KB)