SPN2012 - N-Channel MOSFET
The SPN2012 is the N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suit
SPN2012 Features
* N-Channel 20V/0.95A,RDS(ON)=310mΩ@VGS=4.5V 20V/0.75A,RDS(ON)=360mΩ@VGS=2.5V 20V/0.65A,RDS(ON)=460mΩ@VGS=1.8V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability
* ESD protected
* SOT-23 package design PIN CON
