SPN2012 N-Channel MOSFET

SYNC POWER

Description

SPN2012 N-Channel Enhancement Mode MOSFET .
The SPN2012 is the N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

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Datasheet Specifications

Part number: SPN2012
Manufacturer: SYNC POWER
File Size: 336.50 KB
Datasheet: SPN2012-SYNCPOWER.pdf
Description: N-Channel MOSFET

Features

* N-Channel 20V/0.95A,RDS(ON)=310mΩ@VGS=4.5V 20V/0.75A,RDS(ON)=360mΩ@VGS=2.5V 20V/0.65A,RDS(ON)=460mΩ@VGS=1.8V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability
* ESD protected
* SOT-23 package design PIN CON

Applications

* such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter

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SPN2012 N-Channel MOSFET SYNC POWER

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