SPN2302D Datasheet (SYNC POWER)

SPN2302D, N-Channel MOSFET

The SPN2302D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such a

SPN2302D Features

* 20V/3.6A,RDS(ON)=97mΩ@VGS=4.5V

* 20V/3.1A,RDS(ON)=113mΩ@VGS=2.5V

* 20V/2.8A,RDS(ON)=140mΩ@VGS=1.8V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability

* SOT-23 package design PIN CONFIGURATION(SOT-23) PA