SPN2308 Datasheet (SYNC POWER)

SPN2308, N-Channel MOSFET

The SPN2308 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such a

SPN2308 Features

* 20V/2.0A,RDS(ON)=380mΩ@VGS=4.5V

* 20V/1.5A,RDS(ON)=450mΩ@VGS=2.5V

* 20V/1.0A,RDS(ON)=800mΩ@VGS=1.8V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* SOT-23-3L package design APPLICATIONS

* Power