SPN2302A Datasheet (SYNC POWER)

SPN2302A, N-Channel MOSFET

The SPN2302A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such

SPN2302A Features

* 20V/4.0A,RDS(ON)=75mΩ@VGS=4.5V

* 20V/3.4A,RDS(ON)=95mΩ@VGS=2.5V

* 20V/2.8A,RDS(ON)=135mΩ@VGS=1.8V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* SOT-23-3L package design APPLICATIONS

* Power M