SPN2302 Datasheet (SYNC POWER)

SPN2302, N-Channel MOSFET

The SPN2302 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such a

SPN2302 Features

* 20V/3.6A,RDS(ON)=80mΩ@VGS=4.5V

* 20V/3.1A,RDS(ON)=95mΩ@VGS=2.5V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* SOT-23-3L package design PIN CONFIGURATION(SOT-23-3L) PART MARKING 2020/02/12 Ver.5 Pa