SPN2302W Datasheet (SYNC POWER)

SPN2302W, N-Channel MOSFET

The SPN2302W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such a

SPN2302W Features

* 20V/3.6A,RDS(ON)= 97mΩ@VGS=4.5V 20V/3.1A,RDS(ON)= 113mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design PIN CONFIGURATION(SOT-23) PART MARKING S02WYW 2012/08/06 Ver.2 Page 1 http://www.Datasheet