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SPN2302W

N-Channel MOSFET

SPN2302W Features

* 20V/3.6A,RDS(ON)= 97mΩ@VGS=4.5V 20V/3.1A,RDS(ON)= 113mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design PIN CONFIGURATION(SOT-23) PART MARKING S02WYW 2012/08/06 Ver.2 Page 1 http://www.Datasheet

SPN2302W General Description

The SPN2302W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such a.

SPN2302W Datasheet (265.29 KB)

Preview of SPN2302W PDF

Datasheet Details

Part number:

SPN2302W

Manufacturer:

SYNC POWER

File Size:

265.29 KB

Description:

N-channel mosfet.

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SPN2302W N-Channel MOSFET SYNC POWER

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