SPN2306W Datasheet (SYNC POWER)

SPN2306W, N-Channel MOSFET

The SPN2306W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such

SPN2306W Features

* 30V/5.4A,RDS(ON)=38mΩ@VGS=10V

* 30V/4.6A,RDS(ON)=42mΩ@VGS=4.5V

* 30V/3.8A,RDS(ON)=55mΩ@VGS=2.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability

* SOT-23 package design PIN CONFIGURATION(SOT-23) PART