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SPN2306W N-Channel MOSFET

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Description

SPN2306W N-Channel Enhancement Mode MOSFET .
The SPN2306W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

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Datasheet Specifications

Part number
SPN2306W
Manufacturer
SYNC POWER
File Size
337.37 KB
Datasheet
SPN2306W-SYNCPOWER.pdf
Description
N-Channel MOSFET

Features

* 30V/5.4A,RDS(ON)=38mΩ@VGS=10V
* 30V/4.6A,RDS(ON)=42mΩ@VGS=4.5V
* 30V/3.8A,RDS(ON)=55mΩ@VGS=2.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability
* SOT-23 package design PIN CONFIGURATION(SOT-23) PART

Applications

* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Load Switch
* DSC

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