SPN2306W

N-Channel MOSFET

SYNC POWER

SPN2306W Features

* 30V/5.4A,RDS(ON)=38mΩ@VGS=10V

* 30V/4.6A,RDS(ON)=42mΩ@VGS=4.5V

* 30V/3.8A,RDS(ON)=55mΩ@VGS=2.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability

* SOT-23 package design PIN CONFIGURATION(SOT-23) PART

SPN2306W General Description

The SPN2306W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such .

SPN2306W Datasheet (337.37 KB)

SPN2306W Datasheet Preview — Preview of SPN2306W PDF

Datasheet Details

Part number:

SPN2306W

Manufacturer:

SYNC POWER

File Size:

337.37 KB

Description:

N-channel mosfet.

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SPN2306W N-Channel MOSFET SYNC POWER

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SPN2306W Features

SPN2306W General Description

Datasheet Details

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Description:

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