SPN2346W Datasheet (SYNC POWER)

SPN2346W, N-Channel MOSFET

The SPN2346W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such

SPN2346W Features

* 20V/6.0A,RDS(ON)=35mΩ@VGS=4.5V

* 20V/5.0A,RDS(ON)=40mΩ@VGS=2.5V

* 20V/4.0A,RDS(ON)=100mΩ@VGS=1.8V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability

* SOT-23 package design PIN CONFIGURATION(SOT-23) 202