SPN2622 Datasheet - SYNC POWER

SPN2622 Dual N-Channel Enhancement Mode MOSFET

The SPN2622 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly.

SPN2622 Features

* 20V/4.0A,RDS(ON)= 80mΩ@VGS=4.5V 20V/3.4A,RDS(ON)= 100mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-6L package design PIN CONFIGURATION( SOT-23-6L ) PART MARKING 2009/12/ 05 Ver.1 Page 1 SPN2622

SPN2622 Datasheet (179.29 KB)