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SPN2622 Datasheet - SYNC POWER

Dual N-Channel Enhancement Mode MOSFET

SPN2622 Features

* ‹ 20V/4.0A,RDS(ON)= 80mΩ@VGS=4.5V ‹ 20V/3.4A,RDS(ON)= 100mΩ@VGS=2.5V ‹ Super high density cell design for extremely low RDS (ON) ‹ Exceptional on-resistance and maximum DC current capability ‹ SOT-23-6L package design PIN CONFIGURATION( SOT-23-6L ) PART MARKING 2009/12/ 05 Ver.1 Page 1 SPN2622

SPN2622 General Description

The SPN2622 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly.

SPN2622 Datasheet (179.29 KB)

Preview of SPN2622 PDF

Datasheet Details

Part number:

SPN2622

Manufacturer:

SYNC POWER

File Size:

179.29 KB

Description:

Dual n-channel enhancement mode mosfet.

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SPN2622 Dual N-Channel Enhancement Mode MOSFET SYNC POWER

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