SPN6561 Datasheet (SYNC POWER) - Dual N-Channel MOSFET

SPN6561, Dual N-Channel MOSFET

The SPN6561 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

These devices are particularly

SPN6561 Features

* N-Channel 30V/2.8A,RDS(ON)=60mΩ@VGS=10V 30V/2.3A,RDS(ON)=80mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* SOT-23-6L package design PIN CONFIGURATION(SOT-23-6L) PART MARKING 2020/02/20 Ver.3