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SPN6561

Dual N-Channel MOSFET

SPN6561 Features

* N-Channel 30V/2.8A,RDS(ON)=60mΩ@VGS=10V 30V/2.3A,RDS(ON)=80mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* SOT-23-6L package design PIN CONFIGURATION(SOT-23-6L) PART MARKING 2020/02/20 Ver.3

SPN6561 General Description

The SPN6561 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly.

SPN6561 Datasheet (306.81 KB)

Preview of SPN6561 PDF

Datasheet Details

Part number:

SPN6561

Manufacturer:

SYNC POWER

File Size:

306.81 KB

Description:

Dual n-channel mosfet.

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SPN6561 Dual N-Channel MOSFET SYNC POWER

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