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SPN65T10

N-Channel MOSFET

SPN65T10 Features

* 100V/68A, RDS(ON)=14mΩ@VGS=10V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* TO-220-3L/TO-220F-3L/TO-263-2L/TO-252-2L package design PIN CONFIGURATION TO-220-3L TO-220F-3L TO-263-2L TO-252-2L PART MARK

SPN65T10 General Description

The SPN65T10 is the N-Channel enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier applicati.

SPN65T10 Datasheet (469.64 KB)

Preview of SPN65T10 PDF

Datasheet Details

Part number:

SPN65T10

Manufacturer:

SYNC POWER

File Size:

469.64 KB

Description:

N-channel mosfet.

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SPN65T10 N-Channel MOSFET SYNC POWER

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