SPN6562 Dual N-Channel MOSFET

SYNC POWER

Description

SPN6562 Dual N-Channel Enhancement Mode MOSFET .
The SPN6562 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

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Datasheet Specifications

Part number: SPN6562
Manufacturer: SYNC POWER
File Size: 337.63 KB
Datasheet: SPN6562_SYNCPOWER.pdf
Description: Dual N-Channel MOSFET

Features

* N-Channel 30V/2.8A,RDS(ON)=65mΩ@VGS=10V 30V/2.3A,RDS(ON)=75mΩ@VGS=4.5V 30V/1.5A,RDS(ON)=105mΩ@VGS=2.5V
* Super high density cell design for extremely low RDS (ON)
* Exceptional on-resistance and maximum DC current capability
* SOT-23-6L package design PIN CONFIGURATION( SOT-23-6L

Applications

* such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter

SPN6562 Distributors

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SPN6562 Dual N-Channel MOSFET SYNC POWER

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