SPN6562 Datasheet - SYNC POWER

SPN6562 Dual N-Channel MOSFET

The SPN6562 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly.

SPN6562 Features

* N-Channel 30V/2.8A,RDS(ON)=65mΩ@VGS=10V 30V/2.3A,RDS(ON)=75mΩ@VGS=4.5V 30V/1.5A,RDS(ON)=105mΩ@VGS=2.5V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* SOT-23-6L package design PIN CONFIGURATION( SOT-23-6L

SPN6562 Datasheet (337.63 KB)