SPN65T25 Datasheet (SYNC POWER)

SPN65T25, N-Channel MOSFET

The SPN65T25 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suitable for synchronous rectifier app

SPN65T25 Features

* 250V/90A, RDS(ON)=22mΩ@VGS=10V

* High density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* TO-220-3L/TO-220F-3L/TO-263-2L package design PIN CONFIGURATION PART MARKING 2023/08/22 Ver 0.3 Page 1 SPN65T25 N-Channel Enhanc