SPN8919 Datasheet - SYNC POWER

SPN8919 N-Channel MOSFET

The SPN8919 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The SPN8910 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM .

SPN8919 Features

* 100V/2A, RDS(ON)=180mΩ@VGS=10V

* High density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* SOT-89 package design PIN CONFIGURATION SOT-89 PART MARKING 2020/04/17 Ver.3 Page 1 SPN8919 N-Channel Enhancement Mode MOSFET P

SPN8919 Datasheet (373.47 KB)