SPN80N10A Datasheet - SYNC POWER

SPN80N10A N-Channel Enhancement Mode MOSFET

The SPN80N10A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, split gate DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applic.

SPN80N10A Features

* 100V/74A,RDS(ON)=8.0mΩ@VGS=10V

* 100V/74A,RDS(ON)=10.5mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability

* TO-252-2L package design PIN CONFIGURATION(TO-252-2L) TO-252-2L PART MARKING 2024/07/0

SPN80N10A Datasheet (275.99 KB)