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SPN80N10A - N-Channel Enhancement Mode MOSFET

Description

The SPN80N10A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, split gate DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • 100V/74A,RDS(ON)=8.0mΩ@VGS=10V.
  • 100V/74A,RDS(ON)=10.5mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.
  • TO-252-2L package design PIN.

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Datasheet Details

Part number SPN80N10A
Manufacturer SYNC POWER
File Size 275.99 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet SPN80N10A Datasheet
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SPN80N10A N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN80N10A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, split gate DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching is required. APPLICATIONS  DC/DC Converter  Load Switch  Synchronous Buck Converter  SMPS Secondary Side Synchronous Rectifier  Power Tool  Motor Control 　 FEATURES  100V/74A,RDS(ON)=8.0mΩ@VGS=10V  100V/74A,RDS(ON)=10.5mΩ@VGS=4.
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