SPN8080 - N-Channel MOSFET
The SPN8080 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application , note
SPN8080 Features
* 80V/80A,RDS(ON)= 4.7mΩ@VGS= 10V 80V/37A,RDS(ON)= 8.7mΩ@VGS= 6V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TO-220-3L package design APPLICATIONS z DC/DC Converter z Load Switch SMPS Secondary Side Synchronous Rectifi
