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SPN80T06

N-Channel MOSFET

SPN80T06 Features

* 60V/80A, RDS(ON)=9mΩ@VGS=10V 60V/80A, RDS(ON)=13mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* TO-220-3L/PPAK5x6-8L/TO-252-2L package design PIN CONFIGURATION TO-220-3L PPAK5x6-8L TO-252 PAR

SPN80T06 General Description

The SPN80T06 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifi.

SPN80T06 Datasheet (438.70 KB)

Preview of SPN80T06 PDF

Datasheet Details

Part number:

SPN80T06

Manufacturer:

SYNC POWER

File Size:

438.70 KB

Description:

N-channel mosfet.

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SPN80T06 N-Channel MOSFET SYNC POWER

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