SPP2305D Datasheet - SYNC POWER

SPP2305D P-Channel MOSFET

The SPP2305D is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such .

SPP2305D Features

* -15V/-3.5A,RDS(ON)= 70mΩ@VGS=-4.5V -15V/-3.0A,RDS(ON)= 85mΩ@VGS=-2.5V -15V/-2.0A,RDS(ON)=105mΩ@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design PIN CONFIGURATION(SOT-23) PART MARKING S

SPP2305D Datasheet (202.34 KB)