SPP2305W - P-Channel MOSFET
The SPP2305W is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such
SPP2305W Features
* -15V/-3.5A,RDS(ON)=70mΩ@VGS=-4.5V
* -15V/-3.0A,RDS(ON)=85mΩ@VGS=-2.5V
* -15V/-2.0A,RDS(ON)=105mΩ@VGS=-1.8V
* Super high density cell design for extremely low RDS (ON)
* Exceptional on-resistance and maximum DC current capability
* SOT-23 package design PIN CONFIGURATION(SO
