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SPP2311

P-Channel MOSFET

SPP2311 Features

* P-Channel -30V/0.45A,RDS(ON)=0.65Ω@VGS=-4.5V -30V/0.35A,RDS(ON)=0.90Ω@VGS=-2.5V -30V/0.25A,RDS(ON)=1.5Ω@VGS=-1.8V -30V/0.25A,RDS(ON)=3.0Ω@VGS=-1.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability

* ESD protect

SPP2311 General Description

The SPP2311 is the P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suit.

SPP2311 Datasheet (344.51 KB)

Preview of SPP2311 PDF

Datasheet Details

Part number:

SPP2311

Manufacturer:

SYNC POWER

File Size:

344.51 KB

Description:

P-channel mosfet.

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TAGS

SPP2311 P-Channel MOSFET SYNC POWER

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