SPP2319 Datasheet (SYNC POWER)

SPP2319, P-Channel MOSFET

The SPP2319 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such a

SPP2319 Features

* -40V/-3.0A,RDS(ON)=96mΩ@VGS=-10V

* -40V/-2.8A,RDS(ON)=130mΩ@VGS=-4.5V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* SOT-23-3L package design PIN CONFIGURATION ( SOT-23-3L ) PART MARKING 2022/06/07