SP8010E Datasheet - SamHop Microelectronics

SP8010E, N-Channel Enhancement Mode Field Effect Transistor

Green Product SP8010E Ver 1.2 S a mHop Microelectronics C orp.N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON).

Features

* Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D D D P in 1 5 6 7 8 4 3 2 1 G S S S D TSON 3.3 x 3.3 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter VDS VGS ID IDM PD TJ, TSTG Drain-Source Voltage Gate-So

SP8010E-SamHopMicroelectronics.pdf