* Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D D D P in 1 5 6 7 8 4 3 2 1 G S S S D TSON 3.3 x 3.3 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter VDS VGS ID IDM PD TJ, TSTG Drain-Source Voltage Gate-So
SP8010E
SamHop Microelectronics
108.18 KB
N-channel enhancement mode field effect transistor.
Green Product SP8010E Ver 1.2 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON).
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