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SP8601 - Dual N-Channel Enhancement Mode Field Effect Transistor

Datasheet Summary

Features

  • Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D1 D1 D2 D2 S mini 8 P IN 1 S1 G1 S2 G2.

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Datasheet Details

Part number SP8601
Manufacturer SamHop Microelectronics
File Size 93.60 KB
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet SP8601 Datasheet
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Full PDF Text Transcription

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Green Product SP8601 Ver 2.5 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 17.5 @ VGS=4.5V 18.5 @ VGS=4.0V 20V 7.2A 20.0 @ VGS=3.7V 24.5 @ VGS=3.1V 27.0 @ VGS=2.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D1 D1 D2 D2 S mini 8 P IN 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a c c TA=25°C TA=70°C TA=25°C TA=70°C Limit 20 ±12 7.2 5.8 43 1.47 0.
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