* Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. D D D 5 6 7 8 4 3 2 1 G S S S S O-8 1 D ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Curren
STM4446
SamHop Microelectronics
116.40 KB
N-channel mosfet.
Green Product
STM4446
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS.
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