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STM4884 - N-Channel MOSFET

Datasheet Summary

Features

  • Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ID 13A RDS(ON) (m ) Typ 5.5 @VGS=10V 8.5 @VGS=4.5V D D 5 6 7 8 4 3 2 1 G S S S S O-8 1 D D.

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Datasheet preview – STM4884

Datasheet Details

Part number STM4884
Manufacturer SamHop Microelectronics
File Size 88.54 KB
Description N-Channel MOSFET
Datasheet download datasheet STM4884 Datasheet
Additional preview pages of the STM4884 datasheet.

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Full PDF Text Transcription

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Gre r Pro STM4884 Ver 3.2 SamHop Micrpelectronics Corp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 30V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ID 13A RDS(ON) (m ) Typ 5.5 @VGS=10V 8.5 @VGS=4.5V D D 5 6 7 8 4 3 2 1 G S S S S O-8 1 D D ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VDGR VGS ID IDM EAS I AR PD TJ, TSTG Parameter Drain-Source Voltage Drain-Gate Voltage (RGS = 20 kΩ) Gate-Source Voltage Drain Current-Continuous -Pulsed Avalanche Current Maximum Power Dissipation a b d a Limit 30 30 ±20 TA=25°C TA=70°C 13 10.5 52 45 13 TA=25°C TA=70°C 2.5 1.
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