* Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ID 17A R DS(ON) (m Ω) Max 5 @ VGS=10V 8 @ VGS=4.5V D D 5 6 7 8 4 3 2 1 G S S S S O-8 1 D D ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter
STM4886
SamHop Microelectronics
177.87 KB
N-channel enhancement mode field effect transistor.
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STM4886
S a mHop Microelectronics C orp.
Ver 1.0
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
30V
.
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