SC8180S - Dual N-Channel Enhancement Mode Field Effect Transistor
SC8180S Features
* Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected. WLCSP TOP VIEW 1.88 0.03 8180S Date Code 1.88 0.03 BOTTOM VIEW 0.65 G2 S2 G1 S1 0.65 1-pin index mark S1 Mark area 0.100 0.010 4 - φ 0.31 S1: Source 1 G1: Gate 1 G2: Gate 2 S2: Source 2 U
