* Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected. WLCSP TOP VIEW 1.88 0.03 8180S Date Code 1.88 0.03 BOTTOM VIEW 0.65 G2 S2 G1 S1 0.65 1-pin index mark S1 Mark area 0.100 0.010 4 - φ 0.31 S1: Source 1 G1: Gate 1 G2: Gate 2 S2: Source 2 U
SC8180S
SamHop
127.97 KB
Dual n-channel enhancement mode field effect transistor.
SC8180SGreen
Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
Ver 1.1
PRODUCT SUMMARY
VSSS
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