K4H560838D-TCB3 Datasheet - Samsung Semiconductor

K4H560838D-TCB3 256Mb D-die DDR Sdram

SYMBOL CK, CK DDR SDRAM TYPE Input DESCRIPTION Clock : CK and CK are differential clock inputs. All address and control input signals are sampled on the positive edge of CK and negative edge of CK. Output (read) data is referenced to both edges of CK. Internal clock signals are derived from CK/CK.

K4H560838D-TCB3 Features

* Double-data-rate architecture; two data transfers per clock cycle

* Bidirectional data strobe(DQS)

* Four banks operation

* Differential clock inputs(CK and CK)

* DLL aligns DQ and DQS transition with CK transition

* MRS cycle with address key progra

K4H560838D-TCB3_SamsungSemiconductor.pdf