CXDB5CCAM-MK (CXMT)
LPDDR4X SDRAM
(28 views)
CXDB4ABAM-MK (CXMT)
LPDDR4X SDRAM
(19 views)
HY57V168010 (Hynix Semiconductor)
(HY57V16x010) 16M SDRAM
www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
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www.DataSheet4U.com
www.DataSheet4U.com
www
(8 views)
W9725G8JB (Winbond)
8M X 4 BANKS X 8 BIT DDR2 SDRAM
www.DataSheet.co.kr
W9725G8JB 8M 4 BANKS 8 BIT DDR2 SDRAM
Table of Contents1. 2. 3. 4. 5. 6. 7. 7.1 7.2 GENERAL DESCRIPTION
(8 views)
W9825G6JH (Winbond)
4M X 4 BANKS X 16 BITS SDRAM
www.DataSheet.co.kr
W9825G6JH 4 M 4 BANKS 16 BITS SDRAM
Table of Contents1. 2. 3. 4. 5. 6. 7. GENERAL DESCRIPTION
(8 views)
H5ANAG4NCJR (Hynix Semiconductor)
16Gb DDR4 SDRAM
16Gb DDR4 SDRAM
16Gb DDR4 SDRAM
Lead-Free&Halogen-Free (RoHS Compliant)
H5ANAG4NCJR H5ANAG8NCJR H5ANAG6NCJR
* SK hynix reserves the right to change p
(8 views)
K4B8G1646D (Samsung)
DDP 8Gb D-die DDR3L SDRAM
Rev. 0.9, Jan. 2016 K4B8G1646D
DDP 8Gb D-die DDR3L SDRAM
96FBGA with Lead-Free & Halogen-Free (RoHS compliant)
1.35V
datasheet
SAMSUNG ELECTRONICS
(7 views)
K4S281633D-N1H (Samsung semiconductor)
8Mx16 SDRAM 54CSP
Preliminary
K4S281633D-RL(N)
CMOS SDRAM
8Mx16 SDRAM 54CSP
(V DD/V DDQ 3.0V/3.0V & 3.3V/3.3V)
Revision 0.6 November 2001
Rev. 0.6 Nov. 2001
Preli
(7 views)
V54C3256 (Mosel Vitelic Corp)
256Mbit SDRAM
MOSEL VITELIC
V54C3256(16/80/40)4V(T/S/B) 256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4
PRELIMINARY
6 System
(7 views)
K4M511533E-L (Samsung)
Mobile-SDRAM
K4M511533E - Y(P)C/L/F
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 3.0V or 3.3V power supply. • LVCMOS compatible with multiplexed address.
(7 views)
K4M51323LC-G (Samsung semiconductor)
Mobile-SDRAM
K4M51323LC - S(D)N/G/L/F
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• VDD/VDDQ = 2.5V/2.5V • LVCMOS compatible with multiplexed address. • F
(7 views)
K4M51323LC-F (Samsung semiconductor)
Mobile-SDRAM
K4M51323LC - S(D)N/G/L/F
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES
• VDD/VDDQ = 2.5V/2.5V • LVCMOS compatible with multiplexed address. • F
(7 views)
W971GG6JB (Winbond)
8M X 8 BANKS X 16 BIT DDR2 SDRAM
www.DataSheet.co.kr
W971GG6JB 8M 8 BANKS 16 BIT DDR2 SDRAM
Table of Contents1. 2. 3. 4. 5. 6. 7. 7.1 7.2 GENERAL DESCRIPTION
(7 views)
P3P4GF4BLF (Deutron Electronics)
4G Bits Die DDRIII SDRAM
4G B Die DDRIII SDRAM Specification
P3P4GF4BLF
Deutron Electronics Corp.
8F, 68, Sec. 3, NanKing E. RD., Taipei 104, Taiwan, R.O.C. TEL: (886)-2-251
(7 views)
K4S281632C-TP75 (Samsung semiconductor)
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632C-TI(P)
CMOS SDRAM
128Mbit SDRAM
2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.1 June 2001
* Samsung Electronics reserves the ri
(6 views)
K4H1G1638B-TLB0 (Samsung)
128Mb DDR SDRAM
128Mb DDR SDRAM
DDR SDRAM Specification Version 1.0
- 1 -
REV. 1.0 November. 2. 2000
128Mb DDR SDRAM
Revision History
Version 0 (May, 1998) - Firs
(6 views)
K4H643238C-TCA0 (Samsung)
128Mb DDR SDRAM
128Mb DDR SDRAM
DDR SDRAM Specification Version 1.0
- 1 -
REV. 1.0 November. 2. 2000
128Mb DDR SDRAM
Revision History
Version 0 (May, 1998) - Firs
(6 views)
K4M28163PF-R (Samsung)
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M28163PF - R(B)G/F
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES
• 1.8V power supply. • LVCMOS compatible with multiplexed address. • Four ba
(6 views)
W971GG8JB (Winbond)
16M X 8 BANKS X 8 BIT DDR2 SDRAM
W971GG8JB
16M 8 BANKS 8 BIT DDR2 SDRAM
Table of Contents-
1. GENERAL DESCRIPTION
(6 views)
W9751G6JB (Winbond)
8M X 4 BANKS X 16 BIT DDR2 SDRAM
www.DataSheet.co.kr
W9751G6JB 8M 4 BANKS 16 BIT DDR2 SDRAM
Table of Contents1. 2. 3. 4. 5. 6. 7. 7.1 7.2 GENERAL DESCRIPTION
(6 views)
