K4S281633D-N1H 8Mx16 SDRAM 54CSP

Samsung semiconductor

Description

Preliminary K4S281633D-RL(N) CMOS SDRAM 8Mx16 SDRAM 54CSP (V DD/V DDQ 3.0V/3.0V & 3.3V/3.3V) Revision 0.6 November 2001 Rev.0.6 Nov.2001 Preli.
The K4S281633D is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high.

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Datasheet Specifications

Part number: K4S281633D-N1H
Manufacturer: Samsung semiconductor
File Size: 71.00 KB
Datasheet: K4S281633D-N1H_Samsungsemiconductor.pdf
Description: 8Mx16 SDRAM 54CSP

Features

* 3.0V & 3.3V power supply.
* LVTTL compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1 & 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
* All inputs

Applications

* ORDERING INFORMATION Part No. Max Freq. 133MHz(CL=3) 100MHz(CL=2) 100MHz(CL=2)
* 1 Interface Package LVTTL 54 CSP K4S281633D-RL/N1L 100MHz(CL=3) -RN ; Low Power, Operating Temperature : -25’C~85’C. -RL ; Low Power, Operating Temperature : -25’C~70’C. FUNCTIONAL BLOCK DIAGRAM Note : 1. In

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K4S281633D-N1H 8Mx16 SDRAM 54CSP Samsung semiconductor

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