Datasheet4U Logo Datasheet4U.com

K4S281633D-N1L

8Mx16 SDRAM 54CSP

K4S281633D-N1L Datasheet (71.00 KB)

Preview of K4S281633D-N1L PDF Datasheet

Datasheet Details

Part number:

K4S281633D-N1L

Manufacturer:

Samsung semiconductor

File Size:

71.00 KB

Description:

8mx16 sdram 54csp

K4S281633D-N1L Features

* 3.0V & 3.3V power supply.

* LVTTL compatible with multiplexed address.

* Four banks operation.

* MRS cycle with address key programs. -. CAS latency (1 & 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).

* All inputs

K4S281633D-N1L General Description

The K4S281633D is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every c.

📁 Related Datasheet

K4S281633D-N1H - 8Mx16 SDRAM 54CSP (Samsung semiconductor)
Preliminary K4S281633D-RL(N) CMOS SDRAM 8Mx16 SDRAM 54CSP (V DD/V DDQ 3.0V/3.0V & 3.3V/3.3V) Revision 0.6 November 2001 Rev. 0.6 Nov. 2001 Preli.

K4S281633D-N75 - 8Mx16 SDRAM 54CSP (Samsung semiconductor)
Preliminary K4S281633D-RL(N) CMOS SDRAM 8Mx16 SDRAM 54CSP (V DD/V DDQ 3.0V/3.0V & 3.3V/3.3V) Revision 0.6 November 2001 Rev. 0.6 Nov. 2001 Preli.

K4S281633D-RL - 8Mx16 SDRAM 54CSP (Samsung semiconductor)
Preliminary K4S281633D-RL(N) CMOS SDRAM 8Mx16 SDRAM 54CSP (V DD/V DDQ 3.0V/3.0V & 3.3V/3.3V) Revision 0.6 November 2001 Rev. 0.6 Nov. 2001 Preli.

K4S281632B - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)
K4S281632B CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Electronics reserves the right to.

K4S281632B-N - 2M x 16Bit x 4 Banks Synchronous DRAM in sTSOP (Samsung semiconductor)
shrink-TSOP K4S281632B-N 2M x 16Bit x 4 Banks Synchronous DRAM in sTSOP FEATURES • JEDEC standard 3.3V power supply • LVTTL patible with multiplexe.

K4S281632B-TC10 - 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL (Samsung semiconductor)
K4S281632B CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Electronics reserves the right to.

TAGS

K4S281633D-N1L 8Mx16 SDRAM 54CSP Samsung semiconductor

Image Gallery

K4S281633D-N1L Datasheet Preview Page 2 K4S281633D-N1L Datasheet Preview Page 3

K4S281633D-N1L Distributor