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K4S281633D-N75

8Mx16 SDRAM 54CSP

K4S281633D-N75 Features

* 3.0V & 3.3V power supply.

* LVTTL compatible with multiplexed address.

* Four banks operation.

* MRS cycle with address key programs. -. CAS latency (1 & 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).

* All inputs

K4S281633D-N75 General Description

The K4S281633D is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every c.

K4S281633D-N75 Datasheet (71.00 KB)

Preview of K4S281633D-N75 PDF

Datasheet Details

Part number:

K4S281633D-N75

Manufacturer:

Samsung semiconductor

File Size:

71.00 KB

Description:

8mx16 sdram 54csp.
Preliminary K4S281633D-RL(N) CMOS SDRAM 8Mx16 SDRAM 54CSP (V DD/V DDQ 3.0V/3.0V & 3.3V/3.3V) Revision 0.6 November 2001 Rev. 0.6 Nov. 2001 Preli.

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K4S281633D-N75 8Mx16 SDRAM 54CSP Samsung semiconductor

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