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K4H561638D-TCB3, K4H560838D-TCB3 Datasheet - Samsung Semiconductor

K4H561638D-TCB3 256Mb D-die DDR Sdram

SYMBOL CK, CK DDR SDRAM TYPE Input DESCRIPTION Clock : CK and CK are differential clock inputs. All address and control input signals are sampled on the positive edge of CK and negative edge of CK. Output (read) data is referenced to both edges of CK. Internal clock signals are derived from CK/CK.

K4H561638D-TCB3 Features

* Double-data-rate architecture; two data transfers per clock cycle

* Bidirectional data strobe(DQS)

* Four banks operation

* Differential clock inputs(CK and CK)

* DLL aligns DQ and DQS transition with CK transition

* MRS cycle with address key progra

K4H560838D-TCB3_SamsungSemiconductor.pdf

This datasheet PDF includes multiple part numbers: K4H561638D-TCB3, K4H560838D-TCB3. Please refer to the document for exact specifications by model.
K4H561638D-TCB3 Datasheet Preview Page 2 K4H561638D-TCB3 Datasheet Preview Page 3

Datasheet Details

Part number:

K4H561638D-TCB3, K4H560838D-TCB3

Manufacturer:

Samsung Semiconductor

File Size:

205.14 KB

Description:

256mb d-die ddr sdram.

Note:

This datasheet PDF includes multiple part numbers: K4H561638D-TCB3, K4H560838D-TCB3.
Please refer to the document for exact specifications by model.

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TAGS

K4H561638D-TCB3 K4H560838D-TCB3 256Mb D-die DDR Sdram Samsung Semiconductor

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