K4H561638F-UCCC Datasheet

Manufacturer: Samsung Semiconductor

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Row & Column address configuration Rev. 2003 DDR SDRAM 256Mb F-die (x8, x16) Package Physical Demension DDR SDRAM Units.

200MHz Clock, 400Mbps data rate
VDD= +2.6V + 0.10V, VDDQ= +2.6V + 0.10V
Double-data-rate architecture; two data transfers per clock cycle
Bidirectional data strobe(DQS)
Four banks operation
Differential clock inputs(CK and CK)
DLL aligns DQ and DQS transition with CK transition
MRS cycle with address key programs -. Read latency 3 (clock) for DDR400 , 2.5 (clock) for DDR333 -. Burst length (2, 4,
All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
Data I/O transactions on both edges of data strobe

Part Number	Description	Other Manufacturers
K4H561638A-TCA0	128Mb DDR SDRAM	Samsung
K4H561638A-TCA2	128Mb DDR SDRAM	Samsung
K4H561638A-TCB0	128Mb DDR SDRAM	Samsung
K4H561638A-TLA0	128Mb DDR SDRAM	Samsung
K4H561638A-TLA2	128Mb DDR SDRAM	Samsung

Part Number	Description
K4H561638F-UCC4	256Mb F-die DDR400 SDRAM
K4H561638F-TCC4	256Mb F-die DDR400 SDRAM Specification
K4H561638F-TCCC	256Mb F-die DDR400 SDRAM Specification
K4H561638F	256Mb F-die DDR SDRAM Specification
K4H561638D-TCB3	256Mb D-die DDR Sdram
K4H561638H	(K4H560438H - K4H561638H) 256Mb H-die DDR SDRAM Specification
K4H561638J	256Mb J-die DDR SDRAM Specification
K4H560438D-TCB3	256Mb D-die DDR Sdram
K4H560438H	(K4H560438H - K4H561638H) 256Mb H-die DDR SDRAM Specification
K4H560438J	256Mb J-die DDR SDRAM Specification