• Part: K4H561638D-TCB3
  • Description: 256Mb D-die DDR Sdram
  • Manufacturer: Samsung Semiconductor
  • Size: 205.14 KB
K4H561638D-TCB3 Datasheet (PDF) Download
Samsung Semiconductor
K4H561638D-TCB3

Key Features

  • Double-data-rate architecture; two data transfers per clock cycle
  • Bidirectional data strobe(DQS)
  • Four banks operation
  • Differential clock inputs(CK and CK)
  • DLL aligns DQ and DQS transition with CK transition
  • MRS cycle with address key programs -. Read latency 2, 2.5 (clock) .. -. Burst length (2, 4, 8) -. Burst type (sequential & interleave)
  • All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
  • Data I/O transactions on both edges of data strobe
  • Edge aligned data output, center aligned data input
  • LDM,UDM/DM for write masking only