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K4H561638D-TCB3 Datasheet

Manufacturer: Samsung Semiconductor
K4H561638D-TCB3 datasheet preview

K4H561638D-TCB3 Details

Part number K4H561638D-TCB3
Datasheet K4H561638D-TCB3 K4H560838D-TCB3 Datasheet (PDF)
File Size 205.14 KB
Manufacturer Samsung Semiconductor
Description 256Mb D-die DDR Sdram
K4H561638D-TCB3 page 2 K4H561638D-TCB3 page 3

K4H561638D-TCB3 Overview

256Mb.

K4H561638D-TCB3 Key Features

  • Double-data-rate architecture; two data transfers per clock cycle
  • Bidirectional data strobe(DQS)
  • Four banks operation
  • Differential clock inputs(CK and CK)
  • DLL aligns DQ and DQS transition with CK transition
  • MRS cycle with address key programs -. Read latency 2, 2.5 (clock) .. -. Burst length (2, 4, 8) -. Burst type (sequentia
  • All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
  • Data I/O transactions on both edges of data strobe
  • Edge aligned data output, center aligned data input
  • LDM,UDM/DM for write masking only

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