Datasheet4U Logo Datasheet4U.com

K4Y54084UF Datasheet - Samsung Semiconductor

XDR/RDRAM

K4Y54084UF Features

* Highest pin bandwidth available - 4000/3200/2400 Mb/s Octal Data Rate(ODR) Signaling

* Bi-directional differential RSL(DRSL) - Flexible read/write bandwidth allocation - Minimum pin count

* Programmable on-chip termination - Adaptive impedance matching - Reduced system cost

K4Y54084UF General Description

XDR DRAM The timing diagrams in Figure 1 illustrate XDR DRAM device write and read transactions. There are three sets of pins used for normal memory access transactions: CFM/CFMN clock pins, RQ11..0 request pins, and DQ15..0/DQN15..0 data pins. The ā€œNā€ appended to a signal name denotes the complem.

K4Y54084UF Datasheet (3.45 MB)

Preview of K4Y54084UF PDF

Datasheet Details

Part number:

K4Y54084UF

Manufacturer:

Samsung Semiconductor

File Size:

3.45 MB

Description:

Xdr/rdram.
www.DataSheet4U.com K4Y5416(/08/04)4UF XDR DRAM 256Mbit XDR DRAM(F-die) 2M x 16(/8/4) bit x 8s Banks Version 1.0 Jan. 2005 Version 1.0 Jan. 2005 .

📁 Related Datasheet

K4Y54044UF XDR/RDRAM (Samsung Semiconductor)

K4Y54164UF XDR/RDRAM (Samsung Semiconductor)

K4Y50024UC (K4Y50024UC - K4Y50164UC) 512Mbit XDR TM DRAM (Samsung semiconductor)

K4Y50044UC (K4Y50024UC - K4Y50164UC) 512Mbit XDR TM DRAM (Samsung semiconductor)

K4Y50084UC (K4Y50024UC - K4Y50164UC) 512Mbit XDR TM DRAM (Samsung semiconductor)

K4Y50164UC (K4Y50024UC - K4Y50164UC) 512Mbit XDR TM DRAM (Samsung semiconductor)

K4003 2SK4003 (Toshiba Semiconductor)

K4004-01MR Power MOSFET (Fuji)

K4005-01MR Power MOSFET (Fuji Electric)

K401 Photocoupler (KODENSHI KOREA CORP)

TAGS

K4Y54084UF XDR RDRAM Samsung Semiconductor

Image Gallery

K4Y54084UF Datasheet Preview Page 2 K4Y54084UF Datasheet Preview Page 3

K4Y54084UF Distributor