* Voltage Supply : 2.7V ~ 5.5V
* Organization - Memory Cell Array : (4M + 128K)bit x 8bit - Data Register : (512 + 16)bit x8bit
* Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (8K + 256)Byte - Status Register
* 528-Byte Page Read Operatio
KM29W32000TS Datasheet (346.81 KB)
KM29W32000TS
Samsung Semiconductor
346.81 KB
4m x 8-bit nand flash memory.
KM29W32000TS
Document Title
4M x 8 Bit NAND Flash Memory
Revision History
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Revision No. History
0.0 1.0 1.1 Initial issue. Data Sheet, 1998.
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