KM29W32000TS 4M x 8-Bit NAND Flash Memory

Samsung Semiconductor

Description

KM29W32000TS Document Title 4M x 8 Bit NAND Flash Memory Revision History w w w Revision No.History 0.0 1.0 1.1 Initial issue.Data Sheet, 1998.
The KM29W32000 is a 4M(4,194,304)x8bit NAND Flash Memory with a spare 128K(131,072)x8bit.

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Datasheet Specifications

Part number: KM29W32000TS
Manufacturer: Samsung Semiconductor
File Size: 346.81 KB
Datasheet: KM29W32000TS_SamsungSemiconductor.pdf
Description: 4M x 8-Bit NAND Flash Memory

Features

* Voltage Supply : 2.7V ~ 5.5V
* Organization - Memory Cell Array : (4M + 128K)bit x 8bit - Data Register : (512 + 16)bit x8bit
* Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (8K + 256)Byte - Status Register
* 528-Byte Page Read Operatio

Applications

* and also the spare 16 bytes of a page combined with the other 512 bytes can be utilized by system-level ECC. The KM29W32000 is an optimum solution for large nonvolatile storage application such as solid state storage, digital voice recorder, digital still camera and other portable applications requi

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KM29W32000TS 8-Bit NAND Flash Memory Samsung Semiconductor

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