KM29W32000TS Datasheet - Samsung Semiconductor

KM29W32000TS 4M x 8-Bit NAND Flash Memory

The KM29W32000 is a 4M(4,194,304)x8bit NAND Flash Memory with a spare 128K(131,072)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 528-byte page in typically 250 µs and an erase operation can be performed in typ.

KM29W32000TS Document Title 4M x 8 Bit NAND Flash Memory Revision History w w w Revision No. History 0.0 1.0 1.1 Initial issue. Data Sheet, 1998 Data Sheet, 1999 1) Added CE don’ t care mode during the data-loading and reading .D at h S a t e e 4U . m o c FLASH MEMORY Draft Date April 10th 1998 July 14th 1998 April 10th 1999 Remark Preliminary Final Final w w w .D t a S a e h t e U 4 .c m o The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMS.

KM29W32000TS Features

* Voltage Supply : 2.7V ~ 5.5V

* Organization - Memory Cell Array : (4M + 128K)bit x 8bit - Data Register : (512 + 16)bit x8bit

* Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (8K + 256)Byte - Status Register

* 528-Byte Page Read Operatio

KM29W32000TS_SamsungSemiconductor.pdf