KM29W16000ATS Datasheet - Samsung Electronics

KM29W16000ATS 2M x 8-Bit NAND Flash Memory

The KM29W16000A is a 2M(2,097,152)x8bit NAND Flash Memory with a spare 64K(65,536)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 264-byte page in typically 250µs and an erase operation can be performed in typic.

KM29W16000ATS Document Title 2M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. 1.1 Data Sheet 1998. FLASH MEMORY Draft Date April 10th 1998 July 14th 1998 Remark Preliminary Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you ha ve any questions, please cont.

KM29W16000ATS Features

* Voltage Supply : 2.7V ~ 5.5V

* Organization - Memory Cell Array : (2M + 64K)bit x 8bit - Data Register : (256 + 8)bit x8bit

* Automatic Program and Erase - Page Program : (256 + 8)Byte - Block Erase : (4K + 128)Byte - Status Register

* 264-Byte Page Read Operation -

KM29W16000ATS-SamsungElectronics.pdf